首先是發展三元化合物,如镓鋁砷(gaalas),它能夠與砷化镓(gaas)襯底晶格匹配,當鋁的成分增加時,發射波長藍移。然而,gaalas並不能夠與gaas的晶格非常好地匹配,因此最關鍵的一步是四元化合物,如ingaasp,這提供了匹配晶格間距以及所需波長的第二個自由度。mit林肯實驗室的j. jim hsieh實現了這一步,1977年他報道了室溫下運行的ingaasp激光器輸出1.25µm的激光。[10]隨後不久,也是在inp襯底上,成分略有不同的ingaasp激光器問世,應用於1.3µm和1.55µm的低損耗光纖窗口。通過調整四種元素的組分,ingaasp激光器的輸出波長覆蓋了一個重要的波長範圍(見圖3)。
通過優化gaas襯底激光器的發射材料組分,可將其輸出波長拓展到紅光範圍,例如使用algainp可使輸出波長短至620nm。此後,1996年日亞公司(nichia)的shuji nakamura發明了氮化銦镓(gainn)半導體激光器,激光跨入了光譜的藍光波段。[11]藍光半導體激光器目前屬於標準国产传媒在线,但綠光半導體激光器仍然很難實現。在今年1月份的photonics west 2010會議上,startup kaai公司的nakamura報道已經開發出了523nm的ingan半導體激光器,填補了在半導體激光器在輸出光譜中的空缺。
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